| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BB122 | KB | ||||
| BB1020DT7 | Bi technologies | SCSI Termination Resistor network Low Voltage Differential (LVD) | 190 KB | 2 |  |
| BB119 | PHILIPS SEMICONDUCTORS | Variable capacitance diode | 28 KB | 4 |  |
| BB151 | PHILIPS SEMICONDUCTORS | Low-voltage variable capacitance diode | 53 KB | 8 | |
| BB101CAU-TL | PHILIPS SEMICONDUCTORS | Low-voltage variable capacitance diode | 53 KB | 8 | |
| BB187115 | PHILIPS SEMICONDUCTORS | Low-voltage variable capacitance diode | 53 KB | 8 | |
| BB184 | PHILIPS SEMICONDUCTORS | UHF low voltage variable capacitance diode | 41 KB | 7 | |
| BB101C | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 |  |
| BB134T/R | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB179115 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB148115 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB178115 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB182115 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB131115 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 273 KB | 8 | |
| BB189 | NXP Semiconductors | UHF variable capacitance diode | 51 KB | 6 |  |
| BB135115 | NXP Semiconductors | UHF variable capacitance diode | 51 KB | 6 | |
