| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BCR12AM-12 | KB | ||||
| BCR10KM-14L | KB | ||||
| BCR10KM-8L | KB | ||||
| BCR158F | Infineon Technologies AG | PNP Silicon Digital Transistor | 181 KB | 10 |  |
| BCR8KM-8 | Infineon Technologies AG | PNP Silicon Digital Transistor | 181 KB | 10 | |
| BCR16GM | Infineon Technologies AG | PNP Silicon Digital Transistor | 181 KB | 10 | |
| BCR16KM-14L | Infineon Technologies AG | PNP Silicon Digital Transistor | 181 KB | 10 | |
| BCR169S E6327 | Infineon Technologies AG | PNP Silicon Digital Transistor | 181 KB | 10 | |
| BCR146T | INFINEON | NPN Silicon Digital Transistor | 195 KB | 8 |  |
| BCR08AM | RENESAS TECHNOLOGY CORP | LOW POWER USE PLANAR PASSIVATION TYPE | 94 KB | 6 |  |
| BCR12CM | Powerex Power Semiconductors | Triac 12 Amperes/400-600 Volts | 80 KB | 6 |  |
| BCR12KM-14L | Powerex Power Semiconductors | Triac 12 Amperes/400-600 Volts | 80 KB | 6 | |
| BCR16CM-8 | Powerex Power Semiconductors | Triac 16 Amperes/400-600 Volts | 81 KB | 6 | |
| BCR3KM-14 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 31 KB | 2 |  |
| BCR583E6327 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 31 KB | 2 | |
| BCR12KM-8L | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 31 KB | 2 | |
