| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BFX99 | KB | ||||
| BFY95 | KB | ||||
| BFX79 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 600MA I(C) | TO-77 | 217 KB | 0 | ||
| BFR93AWE6327 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 600MA I(C) | TO-77 | 217 KB | 0 | ||
| BFW22 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-18 | 647 KB | 0 | ||
| BFQ26 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-18 | 647 KB | 0 | ||
| BF014E0104KDD | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-18 | 647 KB | 0 | ||
| BF1012S | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | 43 KB | 4 |  |
| BF2030R E6327 | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | 43 KB | 4 | |
| BF213 | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | 43 KB | 4 | |
| BF243 | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | 43 KB | 4 | |
| BF166 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BF131 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BFG425W115 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BFG520/X215 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BFQ14 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
