型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
BF965 | | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103
| 238 KB | 0 | |
BF900R | | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103
| 238 KB | 0 | |
BF992R | | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103
| 238 KB | 0 | |
BF998/T1 | | TRANSISTOR MOSFET
| 79 KB | 0 | |
BF998R/MRs | | TRANSISTOR MOSFET
| 79 KB | 0 | |
BF998TA | | TRANSISTOR MOSFET
| 79 KB | 0 | |
BF979S | SIEMENS SEMICONDUCTOR GROUP | PNP SILICON PLANAR TRANSISTOR | 35 KB | 2 | |
BF961B | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
BF908215 | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
BF995BW | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
BF990-01 | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
BF998B-GS08 | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |