| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BGA2717 T/R | KB | ||||
| BGA615L7 E6327 | KB | ||||
| BGA734L16E6327 | KB | ||||
| BGA312 | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 |  |
| BGA318 | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA428/PGS | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA2716 T/R | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA2011 T/R | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA2022 T/R | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA256-T-2727 | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA2771,115 | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA2776 T/R | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | 20 KB | 4 | |
| BGA310 | SIEMENS SEMICONDUCTOR GROUP | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) | 20 KB | 4 | |
