| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BSM25GP120 | eupec GmbH | Technical Information IGBT-Modules | 201 KB | 12 |  |
| BSM100GB120DN2 | eupec GmbH | IGBT Power Module | 227 KB | 11 | |
| BSM200GA120DN2 | eupec GmbH | IGBT Power Module | 208 KB | 11 | |
| BSM150GB120DN2 | eupec GmbH | IGBT Power Module | 854 KB | 11 | |
| BSM50GP120 | eupec GmbH | IGBT-Modules | 215 KB | 12 | |
| BSM25GD120DN2 | eupec GmbH | IGBT Power Module | 270 KB | 9 | |
| BSM300GB120DLC | eupec GmbH | IGBT Power Module | 270 KB | 9 | |
| BSM50GD120DN2 | SIEMENS SEMICONDUCTOR GROUP | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) | 126 KB | 9 |  |
| BSM15GD120DN2 | eupec GmbH | IGBT Power Module | 249 KB | 9 | |
| BSM150GT120DN2 | SIEMENS SEMICONDUCTOR GROUP | IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) | 182 KB | 9 | |
| BSM200GB120DN2 | eupec GmbH | IGBT Power Module | 180 KB | 11 | |
| BSM10GD120DN2 | eupec GmbH | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C) | 99 KB | 0 | |
| BSM75GD120DN2 | SIEMENS SEMICONDUCTOR GROUP | IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) | 185 KB | 9 | |
| BSM100GD120DN2 | Infineon Technologies AG | IGBT Chip in NPT-technology | 81 KB | 4 |  |
| BSM10GP120 | Infineon Technologies AG | IGBT Chip in NPT-technology | 81 KB | 4 | |
| BSM50GX120DN2 | Infineon Technologies AG | IGBT Chip in NPT-technology | 81 KB | 4 | |
