| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BSS8402DW-7 | DIODES INCORPORATED | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 138 KB | 5 |  |
| BSS192P | Infineon Technologies AG | SIPMOS Small-Signal-Transistor | 301 KB | 8 |  |
| BSS138LT3G | ON Semiconductor | Power MOSFET 200 mA, 50 V | 133 KB | 5 |  |
| BSS63E6327 | ON Semiconductor | Power MOSFET 200 mA, 50 V | 133 KB | 5 | |
| BSS92 (PRFMD) | ON Semiconductor | Power MOSFET 200 mA, 50 V | 133 KB | 5 | |
| BSS123-NL | ON Semiconductor | Power MOSFET 200 mA, 50 V | 133 KB | 5 | |
| BSS296 | SIEMENS SEMICONDUCTOR GROUP | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | 76 KB | 7 |  |
| BSS63T/R | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 100MA I(C) | SOT-23 | 100 KB | 0 | |
| BSS95 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 800MA I(D) | TO-202VAR | 227 KB | 0 | |
| BSS138DW-7 | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 105 KB | 5 | |
| BSS123L6327 | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 105 KB | 5 | |
| BSS65TA | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 105 KB | 5 | |
| BSS80B | Guangdong Kexin Industrial Co.,Ltd | PNP Silicon Switching Transistors | 41 KB | 2 |  |
| BSS123 E6327 | Guangdong Kexin Industrial Co.,Ltd | PNP Silicon Switching Transistors | 41 KB | 2 | |
| BSS7728 | INFINEON | SIPMOS Small-Signal-Transistor | 107 KB | 8 |  |
| BSS84P-E6327 | INFINEON | SIPMOS Small-Signal-Transistor | 107 KB | 8 | |
