| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| CM1200HC-34H | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 65 KB | 6 |  |
| CM1425-01CS | ON SEMICONDUCTOR | 4-Channel EMI Filter Array with ESD Protection | 227 KB | 9 |  |
| CM200DY-12A | ON SEMICONDUCTOR | 4-Channel EMI Filter Array with ESD Protection | 227 KB | 9 | |
| CM200DY-24 | ON SEMICONDUCTOR | 4-Channel EMI Filter Array with ESD Protection | 227 KB | 9 | |
| CM1922X330R-00 | ON SEMICONDUCTOR | 4-Channel EMI Filter Array with ESD Protection | 227 KB | 9 | |
| CM150RL-24NF | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 112 KB | 6 | |
| CM200TU-5F | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 |  |
| CM2-0405GOO | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM211N | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21X7R223K50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM22AF-1B61（TMP88CM22AF-1B61） | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH5R1C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH7R5C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH820J50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH9R0C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM2835GPIM23 | List of Unclassifed Manufacturers | 300mA CMOS LDO | 328 KB | 9 |  |
