型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
CGY2030T | | | KB | | |
CGY2100 | | | KB | | |
CGY2013G | PHILIPS SEMICONDUCTORS | GSM 4 W power amplifier | 86 KB | 12 | |
CGY52E6327 | PHILIPS SEMICONDUCTORS | GSM 4 W power amplifier | 86 KB | 12 | |
CGY96 | SIEMENS SEMICONDUCTOR GROUP | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) | 101 KB | 10 | |
CGY50E6327 | SIEMENS SEMICONDUCTOR GROUP | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) | 101 KB | 10 | |
CGY2032 | SIEMENS SEMICONDUCTOR GROUP | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) | 101 KB | 10 | |
CGY2032BT | SIEMENS SEMICONDUCTOR GROUP | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) | 101 KB | 10 | |
CGY62 | SIEMENS SEMICONDUCTOR GROUP | GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output) | 25 KB | 5 | |
CGY887 | PHILIPS SEMICONDUCTORS | 870 MHz, 21.5 dB gain push-pull amplifier | 51 KB | 8 | |
CGY180E-6327 | PHILIPS SEMICONDUCTORS | 870 MHz, 21.5 dB gain push-pull amplifier | 51 KB | 8 | |
CGY887B112 | PHILIPS SEMICONDUCTORS | 870 MHz, 21.5 dB gain push-pull amplifier | 51 KB | 8 | |
CGY888C | NXP | 34 dB, 870 MHz GaAs push-pull forward amplifier | 58 KB | 7 | |
CGY2217 | NXP | 34 dB, 870 MHz GaAs push-pull forward amplifier | 58 KB | 7 | |
CGY2014ATW | PHILIPS SEMICONDUCTORS | GSM/DCS/PCS power amplifier | 73 KB | 12 | |
CGY3595HN | PHILIPS SEMICONDUCTORS | GSM/DCS/PCS power amplifier | 73 KB | 12 | |