| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| CLPD6729QCC | KB | ||||
| CLC021VGZ3.3 | KB | ||||
| CL8820-P160TL | KB | ||||
| CL10B223KBNC | KB | ||||
| CL32B224KBNE | KB | ||||
| CL21B103KBANNNC | SAMSUNG | Multi Layer Ceramic Capacitor | 87 KB | 1 |  |
| CLD3716A | SAMSUNG | Multi Layer Ceramic Capacitor | 87 KB | 1 | |
| CLC404 | National Semiconductor | Wideband, High-Slew Rate, Monolithic Op Amp | 374 KB | 6 |  |
| CLC5632IN | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CL-PD6729-QC-AA | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CL-SH3356-130HC-G | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CL23B103R | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CL31B224KBNE | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CLA72033CW | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CLA3317 | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
| CL4010-G168 | National Semiconductor | Dual, High Output, Programmable Gain Buffer | 355 KB | 19 | |
