| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| CM215COG101DAT2E | KB | ||||
| CM21B106M06AT | KB | ||||
| CM200S | AEL Crystals Ltd | Plastic Moulded Watch Crystals | 137 KB | 1 |  |
| CM200TL-12NF | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 107 KB | 5 |  |
| CM2030-00TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 107 KB | 5 | |
| CM200DY-12A | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 107 KB | 5 | |
| CM200DY-24 | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 107 KB | 5 | |
| CM200TU-5F | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 |  |
| CM2-0405GOO | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM211N | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21X7R223K50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM22AF-1B61（TMP88CM22AF-1B61） | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH5R1C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH7R5C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH820J50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
| CM21CH9R0C50AT | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts | 73 KB | 4 | |
