型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
CM200DU-12F | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 127 KB | 4 |  |
CM200DU-24H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 84 KB | 4 |  |
CM2830ASIM89TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 84 KB | 4 |  |
CM200HA-24H | Powerex Power Semiconductors | Single IGBTMOD 200 Amperes/1200 Volts | 67 KB | 4 |  |
CM20LD-12H | Powerex Power Semiconductors | Single IGBTMOD 200 Amperes/1200 Volts | 67 KB | 4 |  |
CM200DY-12NF | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 96 KB | 4 |  |
CM20MDL-12H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 96 KB | 4 |  |
CM2830ASIM23TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 96 KB | 4 |  |
CM2831SIM25TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 96 KB | 4 |  |
CM200TU-12H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 117 KB | 4 |  |
CM2830AKIM23TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 117 KB | 4 |  |
CM2009-02QR | California Micro Devices Corp | VGA Port Companion Circuit | 116 KB | 6 |  |
CM200DU-24F | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 133 KB | 4 |  |
CM2830SIM89TR | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 133 KB | 4 |  |
CM200DY-24A | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE | 103 KB | 5 |  |
CM200DY-28H | Powerex Power Semiconductors | Dual IGBTMOD 200 Amperes/1400 Volts | 60 KB | 4 |  |