型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
CM75DU-24F | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE | 50 KB | 4 | |
CM75E3Y-12E | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE | 50 KB | 4 | |
CM75TF-24H | Powerex Power Semiconductors | Six-IGBT IGBTMOD 75 Amperes/1200 Volts | 63 KB | 4 | |
CM7019L3-T4 | Powerex Power Semiconductors | Six-IGBT IGBTMOD 75 Amperes/1200 Volts | 63 KB | 4 | |
CM75BU-12H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 109 KB | 4 | |
CM75E3U-12H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 80 KB | 4 | |
CM75TF-28H | Powerex Power Semiconductors | Six-IGBT IGBTMOD 75 Amperes/1400 Volts | 62 KB | 4 | |
CM7073 | Powerex Power Semiconductors | Six-IGBT IGBTMOD 75 Amperes/1400 Volts | 62 KB | 4 | |
CM75DY-28K | Powerex Power Semiconductors | Six-IGBT IGBTMOD 75 Amperes/1400 Volts | 62 KB | 4 | |
CM75TU-24F | Powerex Power Semiconductors | Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts | 127 KB | 4 | |
CM75E3U-24H | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |
CM7017L3-T4 | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |
CM75YE13-12F | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |
CM7200F1 | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |
CM7100L1-T4 | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |
CM7013L2-T4 | MITSUBISHI ELECTRIC SEMICONDUCTOR | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | 79 KB | 4 | |