| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| FLM1314-12F | Eudyna Devices Inc | X, Ku-Band Internally Matched FET | 308 KB | 4 |  |
| FLM3135-18F | Eudyna Devices Inc | C-Band Internally Matched FET | 295 KB | 4 | |
| FLM4450-45F | Eudyna Devices Inc | C-Band Internally Matched FET | 201 KB | 5 | |
| FM1110-QG | Eudyna Devices Inc | C-Band Internally Matched FET | 201 KB | 5 | |
| FM120 | Formosa MS | Chip Schottky Barrier Diodes - Silicon epitaxial planer type | 71 KB | 2 |  |
| FM1702N | Formosa MS | Chip Schottky Barrier Diodes - Silicon epitaxial planer type | 71 KB | 2 | |
| FM2305A | Formosa MS | Chip Schottky Barrier Diodes - Silicon epitaxial planer type | 71 KB | 2 | |
| FM24C04-PI | Formosa MS | Chip Schottky Barrier Diodes - Silicon epitaxial planer type | 71 KB | 2 | |
| FM24C08UFLEM8 | Formosa MS | EEPROM | 95 KB | 0 | |
| FM27C010V452 | Formosa MS | EEPROM | 95 KB | 0 | |
| FM27C010VE150 | Formosa MS | x8 EPROM | 143 KB | 0 | |
| FM336PLUS/CX06832-12 | Formosa MS | x8 EPROM | 143 KB | 0 | |
| FM400TU-07A | MITSUBISHI ELECTRIC SEMICONDUCTOR | MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE | 122 KB | 5 |  |
| FM50E2Y-10 | MITSUBISHI ELECTRIC SEMICONDUCTOR | MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE | 122 KB | 5 | |
| FM93C46LZEMT8 | FAIRCHILD | Microwire Serial EEPROM | 114 KB | 0 |  |
| FM93C86LM8X | FAIRCHILD | Microwire Serial EEPROM | 114 KB | 0 | |
