| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| F201230P1 | KB | ||||
| F1891HD600 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F204732P1 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F20U20S | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F2111BTETOV | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F2410169 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F16W61 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F18111SD600 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F10E | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F10P040 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|90A I(T) | 208 KB | 0 | ||
| F1018 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 |  |
| F0805B0R50FWTRM | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
| F1040 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 32 KB | 2 | |
| F102563FNR | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 32 KB | 2 | |
| F103488FN | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 32 KB | 2 | |
| F1032B | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 |  |
