| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| F1760833BPPM | KB | ||||
| F18004 | KB | ||||
| F1855HD600 | KB | ||||
| F1856SD600 | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) | 208 KB | 0 | ||
| F1C154BNYL16 | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) | 208 KB | 0 | ||
| F1J2H TP | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) | 208 KB | 0 | ||
| F1J6TP/J6 | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) | 208 KB | 0 | ||
| F1JP6TP | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) | 208 KB | 0 | ||
| F2003 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 |  |
| F203532P1 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F20P04Q | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F2317VTE25V-H8S/2317 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F2317VTF25V | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F2574-01 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F2602-01 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
| F26684.50 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 37 KB | 2 | |
