| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| FS6312-71 | KB | ||||
| FS18SM-14A | Powerex Power Semiconductors | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | 47 KB | 4 |  |
| FZT1151A | DIODES INCORPORATED | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 4 |  |
| FZT690B | DIODES INCORPORATED | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 2 | |
| FZH175 | DIODES INCORPORATED | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 2 | |
| FY4AEJ-03-T13 | DIODES INCORPORATED | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 2 | |
| FW82371AB（SL23P） | DIODES INCORPORATED | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 2 | |
| FW82371EB-SL37M | DIODES INCORPORATED | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | 108 KB | 2 | |
| FSTU3257MTC | FAIRCHILD | Quad 2:1 Multiplexer/Demultiplexer Bus Switch with 2V Undershoot Protection | 200 KB | 6 |  |
| FYP2006DN | FAIRCHILD | SCHOTTKY BARRIER RECTIFIER | 46 KB | 4 | |
| FZJ161 | FAIRCHILD | SCHOTTKY BARRIER RECTIFIER | 46 KB | 4 | |
| FZ800R12KE3 | Infineon Technologies AG | 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode | 1609 KB | 9 |  |
| FZT792A | DIODES INCORPORATED | SOT223 PNP SILICON PLANAR HIGH GAIN | 88 KB | 3 | |
| FQB3N60C | Fairchild Semiconductor | 600V N-Channel MOSFET | 761 KB | 8 |  |
| FQB6N60C | FAIRCHILD | 600V N-Channel MOSFET | 680 KB | 9 | |
| FQP9N25 | FAIRCHILD | 250V N-Channel MOSFET | 713 KB | 8 | |
