| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| FSLB2520-220K | TOKO, Inc | Wire Wound Chip Inductors | 158 KB | 2 |  |
| FSBS15SM60I | TOKO, Inc | Wire Wound Chip Inductors | 158 KB | 2 | |
| FS50SMJ-03 | RENESAS | MITSUBISHI Nch POWER MOSFET | 81 KB | 5 |  |
| FS70UM-06 | RENESAS | High-Speed Switching Use Nch Power MOS FET | 172 KB | 7 | |
| FS7140-1G | RENESAS | High-Speed Switching Use Nch Power MOS FET | 172 KB | 7 | |
| FS3UM-18 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH-SPEED SWITCHING USE | 41 KB | 4 |  |
| FR1A | Shenzhen Taychipst Electronic Co., Ltd | SURFACE MOUNT FAST RECOVERY RECTIFIERS | 1696 KB | 2 |  |
| FR310 | First Components International | 3.0 Amp FAST RECOVERY PLASTIC RECTIFIERS | 112 KB | 2 |  |
| FS10VS-6 | Powerex Power Semiconductors | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | 47 KB | 4 |  |
| FS10KM12 | Powerex Power Semiconductors | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | SOT-186 | 203 KB | 0 | |
| FRJA6142 | Powerex Power Semiconductors | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | SOT-186 | 203 KB | 0 | |
| FQU13N06TU | Powerex Power Semiconductors | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | SOT-186 | 203 KB | 0 | |
| FQU4N50TU | Powerex Power Semiconductors | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | SOT-186 | 203 KB | 0 | |
| FQU6N50C | FAIRCHILD | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology | 687 KB | 9 |  |
| FQI3N40 | FAIRCHILD | 400V N-Channel MOSFET | 733 KB | 9 | |
| FQI9N50C | FAIRCHILD | 500V N-Channel MOSFET | 802 KB | 9 | |
