型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
F1014 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F10P04 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F10U150S | Polyfet RF Devices | f10u150s的pdf | 75 KB | 0 | |
F1066 1 | Polyfet RF Devices | f10u150s的pdf | 75 KB | 0 | |
F102326FN | Polyfet RF Devices | f10u150s的pdf | 75 KB | 0 | |
F1007 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F1008 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F104756FN | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F1034 | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 | |
F104667FN | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 | |
F104667FN(27106) | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 | |
F10E | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 | |
F10P040 | PETERMANN-TECHNIK | HIGH RELIABILITY FOR LOW COST | 90 KB | 5 | |
F1018 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 | |
F1040 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 32 KB | 2 | |
F102563FNR | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 32 KB | 2 | |