| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| FDS8926A | FAIRCHILD | Dual N-Channel Enhancement Mode Field Effect Transistor | 201 KB | 8 |  |
| FDS6676 | FAIRCHILD | 30V N-Channel PowerTrench MOSFET | 99 KB | 6 | |
| FDS3590 | FAIRCHILD | 80V N-Channel PowerTrench MOSFET | 204 KB | 8 | |
| FDS4480 | FAIRCHILD | 40V N-Channel PowerTrench MOSFET | 88 KB | 6 | |
| FDS7066ASN3 | FAIRCHILD | 30V N-Channel PowerTrench SyncFET | 144 KB | 7 | |
| FDS6690AS | TEXAS INSTRUMENTS | Dual-Synchronous, Step-Down Controller with Out-of-Audio? Operation and 100-mA LDOs for Notebook System Power | 909 KB | 33 |  |
| FDS6982AS | FAIRCHILD | Dual Notebook Power Supply N-Channel PowerTrench㈢ SyncFET⑩ | 440 KB | 10 | |
| FDS6676AS | FAIRCHILD | 30V N-Channel PowerTrench㈢ SyncFET | 1215 KB | 8 | |
| FDS2170N7 | FAIRCHILD | 200V N-Channel PowerTrench MOSFET | 209 KB | 6 | |
| FDS6685 | FAIRCHILD | P-Channel Logic Level PowerTrenchTM MOSFET | 204 KB | 8 | |
| FDS4435BZ | FAIRCHILD | P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mFET 型 MOSFET P 通道，金属氧化物 FET 特点 逻辑电平门 开态Rds（最大）@ Id, Vgs @ 25° C 20 毫欧 @ 8.8A, 10V 漏极至源极电压(Vdss) 30V Id 时的 Vgs(th)（最大） 3V @ 250µA 闸电荷(Qg) @ Vgs 40nC @ 10V 电流 - 连续漏极(Id) @ 25° C 8.8A 在 Vds 时的输入电容(Ciss) 1845pF @ 15V 功率 - 最大 1W 安装类型 表面贴装 | 225 KB | 6 | |
| FDS2670 | Fairchild Semiconductor | Power Converter Topology and MOSFET Selection for 48-V Telecom | 85 KB | 12 |  |
| FDS2572 | FAIRCHILD | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET | 273 KB | 12 | |
| FDS5690 | FAIRCHILD | 60V N-Channel PowerTrench MOSFET | 236 KB | 8 | |
| FDS6609A | FAIRCHILD | P-Channel Logic Level PowerTrench MOSFET | 646 KB | 8 | |
| FDS7296N3 | FAIRCHILD | 30V N-Channel PowerTrench MOSFET | 122 KB | 7 | |
