| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| GA201A | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 |  |
| GA243DR7E2473MW01L | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA252DB3E2223MY02L | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA2P4W22 | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA22V10-5SC | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA200TS60U | International Rectifier | HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | 303 KB | 10 |  |
| GA22V10-7SC | International Rectifier | HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | 303 KB | 10 | |
| GA200TD120U | International Rectifier | HALF-BRIDGE IGBT DOUBLE INT-A-PAK | 299 KB | 10 | |
| GA200SA60S | Vishay Siliconix | Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A | 182 KB | 9 |  |
| GA200SA60U | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 197 KB | 8 | |
| GA200TD120K | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 197 KB | 8 | |
| GA201 | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA212 | MICROSEMI CORPORATION | SCRs Nanosecond Switching, Planar | 140 KB | 3 | |
| GA250TS60U | International Rectifier | HALF-BRIDGE IGBT INT-A-PAK | 230 KB | 10 | |
| GA200SA60SP | Vishay Siliconix | Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A | 182 KB | 9 | |
| GA212S | Vishay Siliconix | Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A | 182 KB | 9 | |
