| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| GT3180-01-A | KB | ||||
| GT3200-JV | SMSC Corporation | USB2.0 PHY IC | 1357 KB | 48 |  |
| GT3180-01-C | SMSC Corporation | USB2.0 PHY IC | 1357 KB | 48 | |
| GT3180-01-A-DB | SMSC Corporation | USB2.0 PHY IC | 1357 KB | 48 | |
| GT3000 | SMSC Corporation | USB2.0 PHY IC | 1357 KB | 48 | |
| GT3132-01-C | SMSC Corporation | USB2.0 PHY IC | 1357 KB | 48 | |
| GT30J322 | TOSHIBA | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | 257 KB | 5 |  |
| GT3113-03-C | TOSHIBA | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | 257 KB | 5 | |
| GT30J301 | TOSHIBA | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | 329 KB | 6 | |
| GT3132-01-A | TOSHIBA | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | 329 KB | 6 | |
| GT3180-01-1-DB | TOSHIBA | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | 329 KB | 6 | |
| GT3132-01-A-DB | TOSHIBA | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | 329 KB | 6 | |
| GT30J101 | TOSHIBA | Silicon N Channel IGBT High Power Switching Applications | 193 KB | 6 | |
| GT30J121 | TOSHIBA | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | 294 KB | 6 | |
| GT3113-03-A | TOSHIBA | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | 294 KB | 6 | |
| GT30J324 | TOSHIBA | Silicon N Channel IGBT High Power Switching Applications | 190 KB | 7 | |
