型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
GT64120BB1 | | | KB | | |
GT6312 | | | KB | | |
GT60M302 | TOSHIBA | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | 275 KB | 5 |  |
GT64121AB1 | TOSHIBA | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | 275 KB | 5 |  |
GT64130-B-1 | TOSHIBA | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | 275 KB | 5 |  |
GT60J321 | TOSHIBA | The 4th Generation Soft Switching Applications | 183 KB | 6 |  |
GT60M101 | TOSHIBA | The 4th Generation Soft Switching Applications | 183 KB | 6 |  |
GT64120B4 | TOSHIBA | The 4th Generation Soft Switching Applications | 183 KB | 6 |  |
GT64120BO | TOSHIBA | The 4th Generation Soft Switching Applications | 183 KB | 6 |  |
GT60M323 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT64010A-B-1 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT64241AB0C10000 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT6816-002A-PQ011 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT64260BCO-BBD-C133 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT64010AB1TSTDTS | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |
GT6801 | TOSHIBA | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | 168 KB | 6 |  |