| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| HE8049 | KB | ||||
| HE8550 ECB T/B | KB | ||||
| HE8551 EBC T/B | KB | ||||
| HE8702A | KB | ||||
| HE82AD1U12 | KB | ||||
| HE8702AS | KB | ||||
| HE8050 | UNISONIC TECHNOLOGIES | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | 123 KB | 4 |  |
| HE8702E | UNISONIC TECHNOLOGIES | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | 123 KB | 4 | |
| HE8807CL | UNISONIC TECHNOLOGIES | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | 123 KB | 4 | |
| HE82AE1U12 | UNISONIC TECHNOLOGIES | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | 123 KB | 4 | |
| HE8550 | Hi-Sincerity Mocroelectronics | PNP EPITAXIAL PLANAR TRANSISTOR | 36 KB | 3 |  |
| HE8P160 | Hi-Sincerity Mocroelectronics | PNP EPITAXIAL PLANAR TRANSISTOR | 36 KB | 3 | |
| HE8050L-D | Hi-Sincerity Mocroelectronics | PNP EPITAXIAL PLANAR TRANSISTOR | 36 KB | 3 | |
| HE8812SG | Opnext. Inc. | GaAlAs Infrared Emitting Diode | 89 KB | 4 |  |
| HE8P160QV2 | Opnext. Inc. | GaAlAs Infrared Emitting Diode | 89 KB | 4 | |
| HE8550L-D | Opnext. Inc. | GaAlAs Infrared Emitting Diode | 89 KB | 4 | |
