型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
HM514260CLTT7 | | | KB | | |
HM514900AJ-7R | | | KB | | |
HM51W16165LTT-6 | Elpida Memory | 16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh | 618 KB | 35 | |
HM5165805FTT-5 | Elpida Memory | 64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh | 230 KB | 34 | |
HM5165805J16 | Elpida Memory | 64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh | 230 KB | 34 | |
HM5225165BTT-A6 | Elpida Memory | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM | 462 KB | 63 | |
HM581000 | Elpida Memory | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM | 462 KB | 63 | |
HM534251BZ-10 | Elpida Memory | Fast Page Mode VRAM
| 738 KB | 0 | |
HM51W17800TT6 | Elpida Memory | Fast Page Mode VRAM
| 738 KB | 0 | |
HM514170CLTT-7 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
HM514260DTT7 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
HM514100BZ8 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
HM5118165TI6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
HM50464 | Hitachi Semiconductor | SERIES
| 219 KB | 0 | |
HM511000AJP7 | Hitachi Semiconductor | SERIES
| 219 KB | 0 | |
HM5117805TT6 | Hitachi Semiconductor | SERIES
| 219 KB | 0 | |