| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| HM514405CS-6 | x4 EDO Page Mode DRAM | 607 KB | 0 | ||
| HM514900ATT7 | x4 EDO Page Mode DRAM | 607 KB | 0 | ||
| HM514260AJ-6 | x4 EDO Page Mode DRAM | 607 KB | 0 | ||
| HM514260JP8 | x4 EDO Page Mode DRAM | 607 KB | 0 | ||
| HM514265CJ-8 | x16 EDO Page Mode DRAM | 421 KB | 0 | ||
| HM514265CLJ-6 | x16 EDO Page Mode DRAM | 421 KB | 0 | ||
| HM514265CLJ-8 | x16 EDO Page Mode DRAM | 421 KB | 0 | ||
| HM514265DJ-7 | x16 EDO Page Mode DRAM | 1423 KB | 0 | ||
| HM514170CLJ-7 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 |  |
| HM514256ALT8 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5117800BJ6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5117805BJ6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5117405BS-6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5116400TS6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5116160ATT7 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
| HM5113165LTD6 | Hitachi Semiconductor | 262,144-word x 16-bit Dynamic Random Access Memory | 195 KB | 26 | |
