| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRFF223R | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-205AF | 40 KB | 0 | ||
| IRFIP054 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 64A I(D) | TO-247VAR | 66 KB | 0 | ||
| IRFK4H150 | International Rectifier | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION | 167 KB | 8 |  |
| IRFL024ZTRPBF | International Rectifier | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION | 167 KB | 8 | |
| IRFP230 | International Rectifier | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION | 167 KB | 8 | |
| IRFP242R | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 | 45 KB | 0 | |
| IRFP9151 | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-247 | 43 KB | 0 | |
| IRFP9230 | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 |  |
| IRFR010TF | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRFR3103TRL | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRFR3505TRPBF | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRFR9N20DTRLPBF | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRFU12N25DPBF | International Rectifier | HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ) | 230 KB | 11 | |
| IRFW730BTW | International Rectifier | HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ) | 230 KB | 11 | |
| IRG4BC10U | International Rectifier | HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ) | 230 KB | 11 | |
| IRG4BC20FD-STRL | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) | 222 KB | 10 | |
