| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRFIB5N65 | International Rectifier | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A) | 103 KB | 8 |  |
| IRFIP9240 | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8.9A I(D) | TO-247VAR | 376 KB | 0 | |
| IRFM014TF | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8.9A I(D) | TO-247VAR | 376 KB | 0 | |
| IRFM240 | International Rectifier | POWER MOSFET THRU-HOLE (TO-254AA) | 187 KB | 8 | |
| IRFB4227 | International Rectifier | POWER MOSFET THRU-HOLE (TO-254AA) | 187 KB | 8 | |
| IRFF9113 | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 9A I(D) | TO-205AA | 47 KB | 0 | |
| IRFP351 | SAMSUNG | N-CHANNEL POWER MOSFETS | 215 KB | 5 |  |
| IRFR014PBF | Vishay Siliconix | Power MOSFET | 1929 KB | 10 |  |
| IRF9633 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 |  |
| IRF6631TR1PBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF7526D1TR | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF2117S | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF2204PBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF610S2497 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF432 | SAMSUNG | N-CHANNEL POWER MOSFETS | 211 KB | 5 | |
| IRF6216PBF | International Rectifier | HEXFET Power MOSFET | 124 KB | 8 | |
