| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRF3515 | KB | ||||
| IRF9632 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 |  |
| IRF7707TRPBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF740N | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRF6662TR1PBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
| IRFBE30L | Vishay Siliconix | Power MOSFET | 1203 KB | 8 |  |
| IRFF233 | Vishay Siliconix | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4.5A I(D) | TO-205AF | 42 KB | 0 | |
| IRFR18N15DPBF | International Rectifier | SMPS MOSFET | 217 KB | 10 |  |
| IRFR210BTFFP001 | International Rectifier | SMPS MOSFET | 217 KB | 10 | |
| IRFR9210TRPBF | Vishay Siliconix | Power MOSFET | 1582 KB | 8 | |
| IRFR320BTF | Vishay Siliconix | Power MOSFET | 1582 KB | 8 | |
| IRFR420ATRPBF | Vishay Siliconix | Power MOSFET | 167 KB | 8 | |
| IRFW510A | FAIRCHILD | Advanced Power MOSFET | 253 KB | 7 |  |
| IRG4P254S | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRGB5B120KDPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | 283 KB | 13 | |
| IRGPH40F | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
