| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IPB06CN10N G | KB | ||||
| IPB100N04S3-03 | KB | ||||
| IPB025N08N3 G | KB | ||||
| IPB46N03 | KB | ||||
| IPB009N03L G | KB | ||||
| IPB034N03LG | KB | ||||
| IPB072N15N3G | Infineon Technologies AG | OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | 424 KB | 11 |  |
| IPB70N04S3-07 | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB70N10L | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPBT-104-H1-T-D | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB50CN10N G | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB16CN10N G | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB11N06LG | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB08NE8NEG | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB100N06S03-03 | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
| IPB100N08S2-03 | Infineon Technologies AG | OptiMOS-T Power-Transistor | 191 KB | 9 | |
