| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRG4BC30S-S | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) | 204 KB | 9 |  |
| IRF7476TR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) | 204 KB | 9 | |
| IRF7404PBF | International Rectifier | HEXFET Power MOSFET | 231 KB | 9 | |
| IRFF223 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 | 42 KB | 0 | |
| IRFIZ44NPBF | International Rectifier | HEXFET Power MOSFET | 262 KB | 8 | |
| IR21592SPBF | International Rectifier | HEXFET Power MOSFET | 262 KB | 8 | |
| IRF6218S | International Rectifier | HEXFET Power MOSFET | 225 KB | 9 | |
| IR2011SPBF | International Rectifier | HIGH AND LOW SIDE DRIVER | 143 KB | 17 | |
| IR2136SPBF | International Rectifier | 3-PHASE BRIDGE DRIVER | 390 KB | 36 | |
| IRF9541 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 386 KB | 6 |  |
| IRFF231 | Samsung semiconductor | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5.5A I(D) | TO-205AF | 431 KB | 0 | |
| IRF7604TRPBF | Samsung semiconductor | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5.5A I(D) | TO-205AF | 431 KB | 0 | |
| IRGPC20U | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRKT250-12 | International Rectifier | THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|250A I(T) | 147 KB | 0 | |
| IRG4BC20FD-S | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) | 222 KB | 10 | |
| IRFR3707ZTR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) | 222 KB | 10 | |
