| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRFR5410PBF | International Rectifier | HEXFET Power MOSFET | 264 KB | 10 |  |
| IRFU4105 | International Rectifier | Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) | 144 KB | 10 | |
| IRG4BC20SD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) | 287 KB | 10 | |
| IRFI840GLC | Vishay Siliconix | Power MOSFET | 1665 KB | 8 |  |
| IRF9532 | SAMSUNG | P-CHANNEL POWER MOSFETS | 378 KB | 6 |  |
| IRF7335D1TR | SAMSUNG | P-CHANNEL POWER MOSFETS | 378 KB | 6 | |
| IR2010STR | SAMSUNG | P-CHANNEL POWER MOSFETS | 378 KB | 6 | |
| IR2114SS | International Rectifier | HALF-BRIDGE GATE DRIVER IC | 1855 KB | 21 | |
| IR2235 | International Rectifier | 3-PHASE BRIDGE DRIVER | 218 KB | 12 | |
| IR3088AMTRPBF | International Rectifier | 3-PHASE BRIDGE DRIVER | 218 KB | 12 | |
| IRF512 | HARRIS CORPORATION | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | 71 KB | 7 |  |
| IR3S85N2/T2 | HARRIS CORPORATION | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | 71 KB | 7 | |
| IR3Y26A1 | HARRIS CORPORATION | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | 71 KB | 7 | |
| IR3Y05 | HARRIS CORPORATION | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | 71 KB | 7 | |
| IR7822 | HARRIS CORPORATION | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | 71 KB | 7 | |
| IRF4104S | International Rectifier | AUTOMOTIVE MOSFET | 277 KB | 13 | |
