| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRGPC50S | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 |  |
| IRL1004L | International Rectifier | Advanced Process Technology Ultra Low On-Resistance | 124 KB | 10 | |
| IRKD71-16 | International Rectifier | Advanced Process Technology Ultra Low On-Resistance | 124 KB | 10 | |
| IRG4BC10S | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) | 157 KB | 8 | |
| IRFU220PBF | Vishay Siliconix | Power MOSFET | 1446 KB | 8 |  |
| IRFR9310PBF | Vishay Siliconix | Power MOSFET | 832 KB | 8 | |
| IRFS654A | Vishay Siliconix | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB | 282 KB | 0 | |
| IRFF9232 | Vishay Siliconix | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-205AA | 47 KB | 0 | |
| IRFI720GPBF | International Rectifier | HEXFET Power MOSFET | 963 KB | 8 | |
| IRF9521 | SUPERTEX INC. | P-Channel Enhancement-Mode Vertical DMOS Power FETs | 73 KB | 2 |  |
| IRFB4310ZPBF | International Rectifier | HEXFET Power MOSFET | 426 KB | 11 | |
| IRF7403PBF | International Rectifier | HEXFET Power MOSFET | 231 KB | 9 | |
| IRF443 | SAMSUNG | N-CHANNEL POWER MOSFETS | 211 KB | 5 |  |
| IRF353 | SAMSUNG | N-CHANNEL POWER MOSFETS | 212 KB | 5 | |
| IRF1407SPBF | International Rectifier | HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) | 258 KB | 12 | |
| IRF2103S | International Rectifier | HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) | 258 KB | 12 | |
