| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRLR014TRPBF | Vishay Siliconix | Power MOSFET | 2247 KB | 10 |  |
| IRL610 | FAIRCHILD | Advanced Power MOSFET | 235 KB | 7 |  |
| IRL3502PBF | International Rectifier | HEXFET Power MOSFET | 172 KB | 7 |  |
| IRKT41/10 | International Rectifier | HEXFET Power MOSFET | 172 KB | 7 | |
| IRKL71-16 | International Rectifier | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|70A I(T) | 353 KB | 0 | |
| IRGPC20MD2 | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRFZ35 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB | 298 KB | 0 | |
| IRFZ32-003 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB | 298 KB | 0 | |
| IRG4PH40KPBF | International Rectifier | Short Circuit Rated UltraFast IGBT | 527 KB | 8 | |
| IRG4PC50UP | International Rectifier | Short Circuit Rated UltraFast IGBT | 527 KB | 8 | |
| IRFU3607PBF | International Rectifier | HEXFET Power MOSFET | 368 KB | 10 | |
| IRFU220A | FAIRCHILD | Advanced Power MOSFET | 258 KB | 7 | |
| IRFU110N | FAIRCHILD | Advanced Power MOSFET | 258 KB | 7 | |
| IRFS641 | SAMSUNG | Improved inductive ruggedness | 308 KB | 5 |  |
| IRFS742 | SAMSUNG | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220VAR | 304 KB | 0 | |
| IRFS645 | SAMSUNG | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.4A I(D) | TO-220VAR | 309 KB | 0 | |
