| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRG4RC10STR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA | 150 KB | 0 | ||
| IRGI4060DPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 319 KB | 10 |  |
| IRG80N60UFD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 319 KB | 10 | |
| IRGI4045DPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRG5PC60RUF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRG4RC10KTR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRG4RC10KTRR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRG4PC71UD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRFZ44N-KOR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRG4BC30FDS | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRFX96V12-1 | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
| IRFY9140CM | International Rectifier | POWER MOSFET THRU-HOLE (TO-257AA) | 257 KB | 7 | |
| IRFU5N60C | International Rectifier | POWER MOSFET THRU-HOLE (TO-257AA) | 257 KB | 7 | |
| IRFU9024NCPBF | International Rectifier | HEXFET POWER MOSFET | 1348 KB | 10 | |
| IRFU18N15 | International Rectifier | HEXFET POWER MOSFET | 1348 KB | 10 | |
| IRFR9110TRLPBF | Vishay Siliconix | Power MOSFET | 1376 KB | 8 |  |
