型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
---|---|---|---|---|---|
IRF3315-010 | KB | ||||
IRF3300 | KB | ||||
IRF1310S | International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A) | 361 KB | 8 | ![]() |
IRF635 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.5A I(D) | TO-220AB | 417 KB | 0 | ![]() |
IRF620006(HSMRKD) | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.5A I(D) | TO-220AB | 417 KB | 0 | ![]() |
IRF530NL | International Rectifier | HEXFET Power MOSFET | 618 KB | 10 | ![]() |
IRF342 | SAMSUNG | N-CHANNEL POWER MOSFETS | 211 KB | 5 | ![]() |
IRF3305 | International Rectifier | AUTOMOTIVE MOSFET | 239 KB | 9 | ![]() |
IRF3515 | International Rectifier | AUTOMOTIVE MOSFET | 239 KB | 9 | ![]() |
IRF9632 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | ![]() |
IRF7707TRPBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | ![]() |
IRF740N | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | ![]() |
IRF6662TR1PBF | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 | ![]() |
IRFBE30L | Vishay Siliconix | Power MOSFET | 1203 KB | 8 | ![]() |
IRFF233 | Vishay Siliconix | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4.5A I(D) | TO-205AF | 42 KB | 0 | ![]() |
IRFR18N15DPBF | International Rectifier | SMPS MOSFET | 217 KB | 10 | ![]() |