型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
IRF7459 | International Rectifier | Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) | 112 KB | 8 |  |
IRFR020 | Vishay Siliconix | Power MOSFET | 1057 KB | 10 |  |
IRFP254 | Vishay Siliconix | Power MOSFET | 1371 KB | 8 |  |
IRF520N | International Rectifier | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) | 116 KB | 8 |  |
IRF7104TRPBF | International Rectifier | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) | 116 KB | 8 |  |
IRF7807D1TR | International Rectifier | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) | 116 KB | 8 |  |
IRFR3704 | International Rectifier | Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A) | 115 KB | 9 |  |
IRF7380 | International Rectifier | High frequency DC-DC converters | 508 KB | 8 |  |
IRF9410TRPBF | International Rectifier | High frequency DC-DC converters | 508 KB | 8 |  |
IRFD9120PBF | Vishay Siliconix | Power MOSFET | 1875 KB | 8 |  |
IRF7108 | Vishay Siliconix | Power MOSFET | 1875 KB | 8 |  |
IRFP460LCPBF | Vishay Siliconix | Power MOSFET | 1105 KB | 8 |  |
IRFS640A | SAMSUNG | Improved gate charge | 304 KB | 6 |  |
IRF901D1 | SAMSUNG | Improved gate charge | 304 KB | 6 |  |
IRF9Z24 | Vishay Siliconix | Power MOSFET | 1814 KB | 8 |  |
IRF7809ATR | Vishay Siliconix | Power MOSFET | 1814 KB | 8 |  |