| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRG160N60RUFD | KB | ||||
| IRG20N60D | KB | ||||
| IRG25N120D | KB | ||||
| IRG30B120UD | KB | ||||
| IRG40B120UD | KB | ||||
| IRG40N151D | KB | ||||
| IRG40N301D | KB | ||||
| IRG41BC20W | KB | ||||
| IRG41BC30UD | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP | 262 KB | 0 | ||
| IRG4BH20KL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP | 262 KB | 0 | ||
| IRG4CC10UB | 41 KB | 0 | |||
| IRG4CC20FB | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP | 52 KB | 0 | ||
| IRG4CC50WB | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 |  |
| IRG4DC-20FD | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG4PC50FD-EPBF | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG4PF50WD-201P | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
