| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRGPH50MD2 | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 |  |
| IRG4BC40WS | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 343 KB | 10 | |
| IRGP420U | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRG4BC15UDS | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRGS6B60KDPBF | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRGSL30B60K | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 323 KB | 13 | |
| IRG4BC30FD-STRR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 323 KB | 13 | |
| IRGB10B60KDPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | 365 KB | 15 | |
| IRGPH20S | International Rectifier | Fit Rate / Equivalent Device Hours | 98 KB | 35 | |
| IRGP50B60PDPBF | International Rectifier | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE | 385 KB | 10 | |
| IRGB4B60K | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 295 KB | 13 | |
| IRG4RC10UTR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 295 KB | 13 | |
| IRGTDN150M12 | International Rectifier | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 280A I(C) | 426 KB | 0 | |
| IRG4BC30 | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | 137 KB | 8 | |
| IRG4BC15UD-STRL | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | 137 KB | 8 | |
| IRGS30B60KPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | 137 KB | 8 | |
