型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
K6T4016V3C-RB85 | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 154 KB | 9 |  |
K6T4016V3C-RF70 | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 154 KB | 9 |  |
K6T4016V3C-RF10 | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 154 KB | 9 |  |
K6T4016U3C-RB85 | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 154 KB | 9 |  |
K6T1008C2E-GB70T | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 154 KB | 9 |  |
K6T1008V2C-GF10 | Samsung semiconductor | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | 156 KB | 11 |  |
K6T4008C1BGF70 | Samsung semiconductor | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | 156 KB | 11 |  |
K6T4008U1C-TF70 | SAMSUNG | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM | 186 KB | 10 |  |
K6T4008U1C-VB55 | SAMSUNG | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM | 186 KB | 10 |  |
K6T0808C1D-RL70 | SAMSUNG | 32Kx8 bit Low Power CMOS Static RAM | 170 KB | 9 |  |
K6T1008V2C-GB10 | Samsung semiconductor | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | 156 KB | 11 |  |
K6T1008V2C-GD10 | Samsung semiconductor | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | 156 KB | 11 |  |
K6T1008C2C-TB55 | SAMSUNG | 128K x8 bit Low Power CMOS Static RAM | 189 KB | 10 |  |
K6T1008C2D-DB70 | SAMSUNG | 128K x8 bit Low Power CMOS Static RAM | 189 KB | 10 |  |
K6T4008C1CGB70 | SAMSUNG | 128K x8 bit Low Power CMOS Static RAM | 189 KB | 10 |  |
K6T1008V2ETF70 | SAMSUNG | 128K x8 bit Low Power CMOS Static RAM | 189 KB | 10 |  |