型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
M5M5256DFP-45LL | MITSUBISHI ELECTRIC SEMICONDUCTOR | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM | 63 KB | 7 | |
M5M5278DJ-12 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM | 63 KB | 7 | |
M5M5278DJ15 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM | 63 KB | 7 | |
M5M5V108DVP | RENESAS | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | 117 KB | 9 | |
M5M5V12R88CJ-15 | RENESAS | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | 117 KB | 9 | |
M5M82C54-2 | RENESAS | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | 117 KB | 9 | |
M5M81C55AP-2 | RENESAS | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | 117 KB | 9 | |
M5M27C100K | RENESAS | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | 117 KB | 9 | |
M5M29GB | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M411664TP | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M51008AVP10VHT | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M51008AFP | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M417805DTP-6 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M2764P | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M27C128K | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |
M5M28F101VP-15 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 200 KB | 23 | |