型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
MGP3006X | SIEMENS SEMICONDUCTOR GROUP | GHz PLL with I2C Bus and Four Chip Addresses | 450 KB | 21 | |
MGP3006X6 | SIEMENS SEMICONDUCTOR GROUP | GHz PLL with I2C Bus and Four Chip Addresses | 444 KB | 21 | |
MGP3006X5 | SIEMENS SEMICONDUCTOR GROUP | GHz PLL with I2C Bus and Four Chip Addresses | 444 KB | 21 | |
MGP15N40CLG | ON SEMICONDUCTOR | Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK | 91 KB | 10 | |
MGP3002X | ON SEMICONDUCTOR | Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK | 91 KB | 10 | |
MGP11N60ED | ON SEMICONDUCTOR | SHORT CIRCUIT RATED LOW ON-VOLTAGE | 145 KB | 6 | |
MGP7N60ED | ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode | 144 KB | 6 | |
MGP15N35CL | ON SEMICONDUCTOR | Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK | 250 KB | 10 | |
MGP15N40CL | ON Semiconductor | Ignition IGBT 15 Amps, 410 Volts | 84 KB | 12 | |
MGP20N40CL | ON SEMICONDUCTOR | SMARTDISCRETES Internally Clamped, N-Channel IGBT | 118 KB | 5 | |
MGP19N35CL | ON Semiconductor | Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK | 290 KB | 12 | |
MGP4N60ED | ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | 146 KB | 6 | |
MGP20N14CL | ON SEMICONDUCTOR | SMARTDISCRETES Internally Clamped, N-Channel IGBT | 75 KB | 4 | |
MGP15N60U | ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor | 120 KB | 5 | |
MGP20N60U | ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor | 120 KB | 5 | |
MGP14N60E | ON SEMICONDUCTOR | SHORT CIRCUIT RATED LOW ON-VOLTAGE | 121 KB | 5 | |