| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MT4LC16M4H9TG-6 | MICRON TECHNOLOGY, INC. | DRAM | 386 KB | 22 |  |
| MT58L128L18FT-10 | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MT55L256L32PT-7.5 | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MT58LC32K32D8LG-7.5 | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MT58LC64K32D8LG10 | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTC20156DQ-I | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTB30N06VLT4 | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTE1122/P | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTT40A12N | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTP20N10E | MICRON TECHNOLOGY, INC. | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM | 481 KB | 24 | |
| MTP15N05E | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 |  |
| MTP36N06E | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
| MTZJT-774.7B | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
| MTZJT-7724B | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
| MTZJT-725.1B | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
| MTZJT-775.1B | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
