| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MTW10N40E | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTZJT-722.7B | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTZJT-7724A | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTV021N-41 | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTV016N-16 | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTZJT-725.6B | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTZJT-7711B | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTZJT-7210C | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 | |
| MTY16N80E | MOTOROLA | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM | 239 KB | 8 | |
| MTM25N10 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR | 169 KB | 5 | |
| MTM8N40 | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS | 385 KB | 5 | |
| MTP10N06E | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS | 385 KB | 5 | |
| MTD10N05ET4 | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS | 385 KB | 5 | |
| MTE53N50E | MOTOROLA | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM | 167 KB | 8 | |
| MT90502AG-E3 | MOTOROLA | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM | 167 KB | 8 | |
| MT8LSDT864AG-10CB4 | MOTOROLA | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM | 167 KB | 8 |