| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MT4LC1M16C3TG-6 | MICRON TECHNOLOGY, INC. | FPM DRAM | 466 KB | 22 |  |
| MT3074AE-P | MICRON TECHNOLOGY, INC. | FPM DRAM | 466 KB | 22 | |
| MTP5P25 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR | 167 KB | 5 |  |
| MT8880BE | MOTOROLA | POWER FIELD EFFECT TRANSISTOR | 167 KB | 5 | |
| MTP6P20E | ON SEMICONDUCTOR | 是功率MOSFET设计，高能量的雪崩和减刑模式。 | 103 KB | 9 |  |
| MTC-20158TB-C7 | ON SEMICONDUCTOR | 是功率MOSFET设计，高能量的雪崩和减刑模式。 | 103 KB | 9 | |
| MT41LC256K32D4LG-12 | ON SEMICONDUCTOR | 是功率MOSFET设计，高能量的雪崩和减刑模式。 | 103 KB | 9 | |
| MT1369BE | ON SEMICONDUCTOR | 是功率MOSFET设计，高能量的雪崩和减刑模式。 | 103 KB | 9 | |
| MT48LC2M32B2 | MICRON TECHNOLOGY, INC. | SYNCHRONOUS DRAM | 1818 KB | 53 | |
| MT48LC8M16A2TG-75F | MICRON TECHNOLOGY, INC. | SYNCHRONOUS DRAM | 1818 KB | 53 | |
| MT58L128L36P1T-7.5 | MICRON TECHNOLOGY, INC. | SYNCHRONOUS DRAM | 1818 KB | 53 | |
| MTP5N40E | MOTOROLA | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM | 258 KB | 8 | |
| MTW45N10E | MOTOROLA | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM | 155 KB | 8 | |
| MT109A | MOTOROLA | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM | 155 KB | 8 | |
| MT1389EE | MOTOROLA | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM | 155 KB | 8 | |
| MT3075AE | MOTOROLA | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM | 155 KB | 8 | |
