| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MT28F400B5SG-8B | KB | ||||
| MT28F800B5WG-8BET | KB | ||||
| MT28F008B1VG-8 | KB | ||||
| MT28F800B3WG-10T | KB | ||||
| MT28F640J3RG-115ET | KB | ||||
| MT28F800B1WG-10 | KB | ||||
| MT28F004B5VG-8T | KB | ||||
| MT28F320J3RG-11A | KB | ||||
| mt2301 | N-Channel Enhancement Mode Field Effect Transistor | 86 KB | 4 | ||
| MT28F004B1VG6B | N-Channel Enhancement Mode Field Effect Transistor | 86 KB | 4 | ||
| MT28F800B5WG-8TET | N-Channel Enhancement Mode Field Effect Transistor | 86 KB | 4 | ||
| MT28F800B5 | MICRON TECHNOLOGY, INC. | FLASH MEMORY | 1321 KB | 30 |  |
| MT28F016S5 | MICRON TECHNOLOGY, INC. | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY | 282 KB | 24 | |
| MT2121F | MICRON TECHNOLOGY, INC. | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY | 282 KB | 24 | |
| MT28F800B5SG-8T | MICRON TECHNOLOGY, INC. | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY | 282 KB | 24 | |
| MT28F320J3RG-11ET | MICRON TECHNOLOGY, INC. | Q-FLASHTM MEMORY | 541 KB | 52 | |
