| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MTD20N06V | MOTOROLA | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM | 257 KB | 10 |  |
| MTD6N10 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT | 167 KB | 5 | |
| MTD6P10E | MOTOROLA | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM | 261 KB | 10 | |
| MTD4N20ET4 | MOTOROLA | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM | 261 KB | 10 | |
| MTD20N06 | MOTOROLA | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM | 257 KB | 10 | |
| MTD4N20E | MOTOROLA | TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM | 268 KB | 10 | |
| MTD1N60E | MOTOROLA | TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM | 266 KB | 10 | |
| mtd10n10elt4 | ON SEMICONDUCTOR | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount | 79 KB | 7 |  |
| MTD15N06VT4 | ON SEMICONDUCTOR | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount | 79 KB | 7 | |
| MTD3055E | MOTOROLA | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount | 223 KB | 6 | |
| MTD2213G | MOTOROLA | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount | 223 KB | 6 | |
| MTD20N06VT4 | MOTOROLA | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount | 223 KB | 6 | |
| MTD502EF | List of Unclassifed Manufacturers | 2 Port 10M/100M Switch With Build_in Memory | 194 KB | 20 |  |
| MTD3N25E | MOTOROLA | TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM | 253 KB | 10 | |
| MTD493V | MOTOROLA | TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM | 253 KB | 10 | |
| MTD5N25E | MOTOROLA | TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM | 252 KB | 10 | |
