| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MTW26N15E | MOTOROLA | TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM | 160 KB | 8 |  |
| MTW20N20E | MOTOROLA | TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM | 160 KB | 8 | |
| MTW33N10E | MOTOROLA | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM | 227 KB | 8 | |
| MTW355 | MOTOROLA | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM | 227 KB | 8 | |
| MTW10N40E | Motorola, Inc | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | 74 KB | 2 |  |
| MTW54N05E | MOTOROLA | High Energy in the Avalanche and Commutation modes | 68 KB | 2 | |
| MTW23N25E | MOTOROLA | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM | 152 KB | 8 | |
| MTW6N60E | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | 69 KB | 2 | |
| MTW15N25E | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | 69 KB | 2 | |
| MTW20NB50 | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | 69 KB | 2 | |
| MTW32N20 | MOTOROLA | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | 69 KB | 2 | |
| MTW4N80E | MOTOROLA | TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 70 KB | 2 | |
| MTW2815S | Interpoint Corporation Company | –55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection | 445 KB | 6 |  |
| MTW20N50 | Interpoint Corporation Company | –55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection | 445 KB | 6 | |
| MTW20P10 | Interpoint Corporation Company | –55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection | 445 KB | 6 | |
| MTW22N20E | Interpoint Corporation Company | –55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection | 445 KB | 6 | |
