| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| NE6510179A | California Eastern Labs | NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET | 285 KB | 10 |  |
| NEC789 | California Eastern Labs | NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET | 285 KB | 10 | |
| NEC82C55AC-2 | California Eastern Labs | NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET | 285 KB | 10 | |
| NEC271 | California Eastern Labs | NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET | 285 KB | 10 | |
| NESG2021M05-T1-A | California Eastern Labs | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR | 729 KB | 14 | |
| NE5510279A | California Eastern Labs | 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | 42 KB | 5 | |
| NE6500379A-TI | California Eastern Labs | 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS | 42 KB | 5 | |
| NE5204 | PHILIPS SEMICONDUCTORS | Wide-band high-frequency amplifier | 190 KB | 14 |  |
| NE5534DR2G | ON SEMICONDUCTOR | Single Low Noise Operational Amplifier | 165 KB | 10 |  |
| NE5521 | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NEC6379 | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NE5037D | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NE02135-T1 | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NEC305 | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NE5534AH | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
| NE5212AN | PHILIPS SEMICONDUCTORS | LVDT signal conditioner | 69 KB | 5 | |
