| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| NEC2503 | KB | ||||
| NEC2501-4 | KB | ||||
| NEC1513 | KB | ||||
| NEC151821-0100 | KB | ||||
| NEC077P560 | KB | ||||
| NE856M02 | California Eastern Labs | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | 206 KB | 8 |  |
| NE72089A | California Eastern Labs | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | 206 KB | 8 | |
| NE577N | NXP | Unity gain level programmable low power compandor | 50 KB | 4 |  |
| NE650103M | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE5532ADSR | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE3512S02-A | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE3826K | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE28C64-350 | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE13783 | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE3511S02-A | California Eastern Labs | 10 W L & S-BAND POWER GaAs MESFET | 259 KB | 7 | |
| NE3508M04-T2-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISITOR | 1317 KB | 11 | |
